New SiC-MOSFET modules with integrated SBD
Aicox Soluciones and Mitsubishi Electric present two new SiC-MOSFET modules with integrated SBD.
Mitsubishi Electric Corporation reports that it has begun shipping 3.3 kV/400 A and 3.3 kV/200 A low-current versions of a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) module (SiC) with integrated Schottky barrier diode (SBD) for large industrial equipment such as rolling stock and electrical power systems.
Together with the existing 3.3kV/800A version, the new UnifullTM series comprises three modules to meet the growing demand for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
Mitsubishi Electric’s SiC-MOSFET modules with integrated SBD, including the 3.3 kV/800 A version launched on March 29, feature an optimized packaging structure to reduce switching loss and improve SiC performance. Compared to existing power modules, UnifullTM modules significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railway cars and power systems. drive with relatively small capacities.
